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121 D Edelstein et al, "Full Copper Wiring in a Sub-025 gm CMOS ULSI Technology," Int Electron Devices Meeting, 1997, p 773 122 Zielinski et al, "Damascene Integration of Copper and Ultra-Low-k Xerogel for High Performance Interconnects," Int Elecron Devices Meeting, 1997, p 936 123 M Matsuura, I Tottori, K Goto, K N'aekawa, and M Hirayama, "A Highly Reliable Self-planarizing Low-k Intermetal Dielectric for Subquarter Micron Interconnects," Int Electron Devices Meeting, 1997, p 785 124 G Sai-Halasz, "Performance Trends in High-End Processors," IEEE Proc 83, 20 (1995) 125 G Shahidi, C Anderson, B Chappel, T7 Chappel, J Comfort, B Davari, R Dennard, R Franch, P McFarland, J Neely, T Ning, M Polcari, and J Warnock, "A Room Temperature 01 jim CMOS on SO[," IEEE Trans Electron Devices 12, 2405 (1994) 126 I Yang, C Vieri, A Chandrakasan, and D.

iPlanet is a Web server which can be configured through its configuration files (see Table 19.4) or through the admin server an administrative interface available on the Web that typically runs on port 8888. The primary configuration files for iPlanet Web servers are magnus.conf and obj.conf. They typically reside in a directory such as /opt/iplanet/servers/config, along with a number of other files. What goes into each of these files depends on the version of iPlanet that you are running. The obj.conf and magnus.conf files contain much of the same type of information that is in Apache httpd.conf. This involves a series of instructions (called directives just as they are with Apache) that tell the iPlanet Web Server how to process client requests. These directives are all written in a special language called the Netscape Server Application Programming Interface (NSAPI). The iPlanet Web Server comes with a set of predefined server application functions, but the server can be extended if you choose to create additional instructions in this language. Most users make minimal changes to the configuration of their iPlanet servers.

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Antoniadis, "Back-Gated CMOS on SOIAS for Dynamic Threshold Voltage Control," IEEE Trans Electron Devices 44, 822 (1997) 127 M Horiuchi, T Teshima, K Tokumasu, and K Yamaguchi, "High-Current, Small Parasitic Capacitance MOSFET on a Poly,-Si Interlayered (PSI) SOI Wafer," Symp VLSI Technol 33 (1995) 128 T Kachi, T Kaga, S Wakahara, and D Hisamoto, "Variable Threshold-Voltage SO1 CMOSFETs with Implanted Back-Gate Electrodes for Power-Managed Low-Power and High-Speed Sub-l-v ULSIs," Symp VlSI Technol 124 (1996) 129 C Wann, R Tu, B Yu, C Hu, K Noda, T Tanaka, M Yoshida, and K Hui, "A Comparitive Study of Advanced MOSFET Structures," Symp VLSI Technol 32 (1996) 130 C Fiegna, H Iwai, T Wada, T Saito, E Sangiorgi, and B Ricco, "A New Scaling Methodology for the 01-0025 irn MOSFET," Symp VLSI Technol 33 (1992) 131 D Frank, S Laux, and M Fischetti.

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"Monte Carlo Simulation of a 30nm Dual-Gate MOSFET: How Far Can Si Go " Int Electron Devices Meeting, 1992, p 553 132 H-S Wong, D Frank, Y Taur, and J Slork, "Design and Performance Considerations for Sub-01 jim Double-Gate SOI MOSFET's," Int Electron Devices Meeting, 1994, p 747 133 H-S Wong, K Chan, and Y Taur, "Self-Aligned (Top and Bottom) Double-Gate MOSFET with a 25 nm Thick Silicon Channel," Int Electron Devices Meeting, 1997, p 427 134 E Nowak, J Johnson, D Hoyniak, and J Thygesen, "Fundamental MOSFET ShortChannel-Vt/Saturation Current/Body Effect Trade-off," Int Electron Devices Meeting, 1994 135 F Assaderaghi, S Park, D Sinitsky, J Bokor, P-K Ko, and C Hu, "A Dynamic Threshold Voltage MOSFET (DTMOS i for Low Voltage Operation," IEEE Electron Device Lett 15, 510 (1994) 136 I-Y Chung, Y-J Park, and H-S.

Given the popularity of the iPhone these days, iPhone-specific versions of a blog are in demand. The WPhone iPhone Theme plugin (http://wordpress.org/extend/plugins/ wptouch/) uses jQuery to render a version of a WordPress blog that is formatted for the iPhone. The results are shown in Figure 11.6.

Min, "A New SOI Inverter Using Dynamic Threshold for Low-Power Applications," IEEE electronn Device Lett 18, 248 (1997) 137 C Wann, F Assaderaghi, R Dennard, C Hu, G Shahidi, and Y Taur, "Channel Profile Optimization and Device Desigjn for Low-Power High-Performance DynamicThreshold MOSFET," Int Electron leices Meeting, 1996, p 113..

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