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TABLE 10.3-1 Q.931 Message Type Codes Bits Message Name Alerting Call Proceeding Connect Connect Acknowledgment Disconnect Information Progress Release Release Complete Setup Setup Acknowledgment Acronym ALERT CALPRC CONN CONACK DISC INFO PROG RLSE RLCOM SETUP SETACK 8 0 0 0 0 0 0 0 0 0 0 0 7 0 0 0 0 1 1 0 1 1 0 0 6 0 0 0 0 0 1 0 0 0 0 0 5 0 0 0 0 0 1 0 0 1 0 0 4 0 0 0 1 0 1 0 1 1 0 1 3 0 0 1 1 1 0 0 1 0 1 1 2 0 1 1 1 0 1 1 0 1 0 0 1 1 0 1 1 1 1 1 1 0 1 1

for chalcopyrite (I III VI2) materials possibly offer a cleaner or greener approach for depositing thin lms. One advantage is that they offer several tunable sites within the complex, allowing various combinations for depositing chalcopyrite lms of different compositions. Early work on SSPs was performed by Nomura and colleagues34 37 and by Kanatzidis and colleagues.38 Buhro and Hepp along with their colleagues later demonstrated that the thiolate-bridged bimetallic complex, [{PPh3}2Cu( -SEt)2In(SEt)2], could be used in a spray CVD process for depositing CuInS2 thin lms, with processing temperatures under 400 C.39 41 A review of work on chemical precursors was recently reported.3 Films at NASA GRC were deposited using homemade spray or aerosolassisted chemical vapor deposition (AACVD) reactors to exploit the lower deposition temperature enabled by the simpler decomposition chemistry for the SSPs.6 9 AACVD is a simple and inexpensive process that offers the advantage of a uniform, large-area deposition, just like metal organic CVD (MOCVD), while also offering the low-temperature solution reservoir typical of spray pyrolysis methods. Following growth of lms and completion of devices, characterization techniques were employed to determine the properties and performances of the lms and devices. Film thicknesses were measured using a pro ler (Sloan Dektak IIA or KLA-Tencor HRP 75). Film morphologies were studied using a scanning electron microscope (SEM) (Hitachi S-3000N and S-800). The Hitachi S-3000N includes built-in energy dispersive spectroscopy (EDS) (EDAX, Falcon), used to examine lm compositions. Compositional measurements were performed in different areas across each cell to determine the compositional uniformity. The Cu/In ratios were obtained by quantifying the Cu K and In L emission lines using the ZAF standardless method. X-ray dif-

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To achieve ef cient charge transport through an array of nanocrystals, special attention should be paid to eliminating trapping states at the nanocrystal surface and to enhancing the strength of interparticle exchange coupling. As-synthesized, PbSe and PbTe nanocrystal solids are insulating with a conductance (G) of <10 10 S cm 1 (Fig. 10.11b).68 The low G can be attributed to poor exchange coupling between the nanocrystals caused by large 1.1 1.3-nm interparticle spacing (Fig. 10.10b).77 It was found that the conductance of nanocrystal solids increases by 10 orders of magnitude after treatment in a dilute solution of hydrazine in acetonitrile (Fig. 10.11c).68,76 After hydrazine treatment, the current through the nanocrystal lm can be modulated by applying a potential to the back gate electrode (Fig. 10.11d). Such behavior is typical for an n-channel eld-effect transistor (FET). A negative gate bias depletes electrons in the channel, switching off the device. At low drain-source voltage (VDS), the current between source and drain electrodes (ID) increases linearly with VDS, and at high VDS, the current saturates as the channel pinches off near the drain electrode.2 Figure 10.12a shows current modulation Ion/Ioff 2.5 103 for an n-channel PbSe nanocrystal FET, with minor hysteresis between VG scans in the forward and reverse directions. In the on state, the low- eld conductance of the PbSe nanocrystal lm is 0.8 S cm 1 (VG = 40 V)

Figure 10.10 A summary of published sheet resistance versus junction depth for (a) p+ and (b) n+ shallow junctions. The open squares represent for ion-implant-related techniques; the filled squares, are diffusion-related techniques.

CREATE TABLE dbo.Person ( PersonID INT NOT NULL PRIMARY KEY NONCLUSTERED, LastName VARCHAR(15) NOT NULL, FirstName VARCHAR(15) NOT NULL, SrJr VARCHAR(3) NULL, MaidenName VARCHAR(15) NULL, Gender CHAR(1) NOT NULL, FatherID INT NULL, MotherID INT NULL, DateOfBirth DATETIME NULL, DateOfDeath DATETIME NULL ); go CREATE CLUSTERED INDEX IxPersonName ON dbo.Person (LastName, FirstName); ALTER TABLE dbo.Person ADD CONSTRAINT FK_Person_Father FOREIGN KEY (FatherID) REFERENCES dbo.Person (PersonID); ALTER TABLE dbo.Person ADD CONSTRAINT FK_Person_Mother FOREIGN KEY (MotherID) REFERENCES dbo.Person (PersonID);

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