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Reverse Bias for NPN Now imagine that a second battery is connected between the base and the emitter in the circuit of Fig 22-3B, with the polarity such that EB becomes negative with respect to the emitter The addition of this new battery will cause the E-B junction to be reverse-biased No current flows through the E-B junction in this situation (as long as the new battery voltage is not so great that avalanche breakdown occurs) A signal might be injected at the base to cause a flow of current, but such a signal must attain, at least momentarily, a positive voltage high enough to overcome both the reverse bias and the forward breakover voltage of the junction Forward Bias for NPN Now suppose that EB is made positive with respect to the emitter, starting at small voltages and gradually increasing This is forward bias.

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Any time that it is necessary to get energy or signals from one place to another, a transmission line is required. These almost always take either of two forms, coaxial or two wire. These are illustrated qualitatively in Fig. 15-8. Examples of transmission lines include the ribbon that goes from a television antenna to the receiver, the cable running from a hi-fi amplifier to the speakers, and the set of wires that carries electricity over the countryside.

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If the forward bias is less than the forward breakover voltage, no current will flow But as the base voltage EB reaches the breakover point, the E-B junction will start to conduct The base-collector (B-C) junction of a bipolar transistor is normally reverse-biased It will remain reverse-biased as long as EB is less than the supply voltage (in this case 12 V) In practical transistor circuits, it is common for EB to be set at a fraction of the supply voltage Despite the reverse bias of the B-C junction, a significant emitter-collector current, called collector current and denoted IC, will flow once the E-B junction conducts In a real transistor circuit such as the one shown in Fig 22-3B, the meter reading will jump when the forward breakover voltage of the E-B junction is reached.

The Zoh of a parallel-wire transmission line depends on the diameter of the wires, on the spacing between the wires, and on the nature of the insulating material separating the wires.

channels, such as the one shown in the figure, it has eight lasers and eight receivers. The channels are separated by 100 GHz to avoid fiber nonlinearities or they are closer if the system supports the 50-GHz spacing. Each channel, sometimes referred to as a lambda (l, the Greek letter and universal symbol used to represent wavelength), is individually modulated, and ideally the signal strengths of the channels should be close to one another. Generally speaking, this is not a problem, because in DWDM systems the channels are closely spaced and therefore do not experience significant attenuation variation from channel to channel. Operators of DWDM-equipped networks face a significant maintenance issue. Consider a 16-channel DWDM system. This system has 16 lasers, 1 for each channel, which means that the service provider must maintain 16 spare lasers in case of a laser failure. The latest effort underway is the deployment of tunable lasers, which enable the laser to be tuned to any output wavelength, thus reducing the volume of spares that must be maintained and, by extension, the cost. So, what do we find in a typical WDM system A variety of components that include the following:

Then even a small rise in EB, attended by a rise in IB, will cause a large increase in IC, as shown in Fig 22-4 If EB continues to rise, a point will eventually be reached where the IC versus EB curve levels off The transistor is then said to be saturated or in saturation It is wide open, conducting as much as it can..

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